型号:

MJE271G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:TRANS DARL PNP 2A 100V TO-225
详细参数
数值
产品分类 分离式半导体产品 >> 晶体管(BJT) - 单路
MJE271G PDF
标准包装 500
系列 -
晶体管类型 PNP - 达林顿
电流 - 集电极 (Ic)(最大) 2A
电压 - 集电极发射极击穿(最大) 100V
Ib、Ic条件下的Vce饱和度(最大) 3V @ 1.2mA,120mA
电流 - 集电极截止(最大) 1mA
在某 Ic、Vce 时的最小直流电流增益 (hFE) 1500 @ 120mA,10V
功率 - 最大 1.5W
频率 - 转换 6MHz
安装类型 通孔
封装/外壳 TO-225AA,TO-126-3
供应商设备封装 TO225AA
包装 散装
其它名称 MJE271G-ND
MJE271GOS
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